High-efficiency modulating RF amplifier

ABSTRACT

The present invention, generally speaking, provides for high-efficiency power control of a high-efficiency (e.g., bard-limiting or switch-mode) power amplifier in such a manner as to achieve a desired control or modulation. Unlike the prior art, feedback is not required. That is, the amplifier may be controlled without continuous or frequent feedback adjustment. In one embodiment, the spread between a maximum frequency of the desired modulation and the operating frequency of a switch-mode DC-DC converter is reduced by following the switch-mode converter with an active linear regulator. The linear regulator is designed so as to control the operating voltage of the power amplifier with sufficient bandwidth to faithfully reproduce the desired amplitude modulation waveform. The linear regulator is further designed to reject variations on its input voltage even while the output voltage is changed in response to an applied control signal. This rejection will occur even though the variations on the input voltage are of commensurate or even lower frequency than that of the controlled output variation. Amplitude modulation may be achieved by directly or effectively varying the operating voltage on the power amplifier while simultaneously achieving high efficiency in the conversion of primary DC power to the amplitude modulated output signal. High efficiency is enhanced by allowing the switch-mode DC-to-DC converter to also vary its output voltage such that the voltage drop across the linear regulator is kept at a low and relatively constant level. Time-division multiple access (TDMA) bursting capability may be combined with efficient amplitude modulation, with control of these functions being combined. In addition, the variation of average output power level in accordance with commands from a communications system may also be combined within the same structure.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S patent application Ser. No.09/637,269, now U.S. Pat. No. 6,636,112, which was filed on Aug. 10,2000.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to RF amplifiers and signal modulation.

2. State of the Art

Battery life is a significant concern in wireless communications devicessuch as cellular telephones, pagers, wireless modems, etc.Radio-frequency transmission, especially, consumes considerable power. Acontributing factor to such power consumption is inefficient poweramplifier operation. A typical RF power amplifier for wirelesscommunications operates with only about 10% efficiency. Clearly, alow-cost technique for significantly boosting amplifier efficiency wouldsatisfy an acute need.

Furthermore, most modern digital wireless communications devices operateon a packet basis. That is, the transmitted information is sent in aseries of one or more short bursts, where the transmitter is active onlyduring the burst times and inactive at all other times. It is thereforealso desirable that control of burst activation and deactivation becontrolled in an energy-efficient manner, further contributing toextended battery life.

Power amplifiers are classified into different groups: Class A, Class B,Class AB, etc. The different classes of power amplifiers usually signifydifferent biasing conditions. In designing an RF power amplifier, thereis usually a trade-off between linearity and efficiency. The differentclasses of amplifier operation offer designers ways to balance these twoparameters.

Generally speaking, power amplifiers are divided into two differentcategories, linear and non-linear. Linear amplifiers (e.g. Class Aamplifiers and Class B push-pull amplifiers), maintain high linearity,resulting in faithful reproduction of the input signal at their outputsince the output signal is linearly proportional to the input signal. Innon-linear amplifiers (e.g. single-ended Class B and Class Camplifiers), the output signal is not directly proportional to the inputsignal. The resulting amplitude distortion on the output signal makesthese amplifiers most applicable to signals without any amplitudemodulation, which are also known as constant-envelope signals.

Amplifier output efficiency is defined as the ratio between the RFoutput power and the input (DC) power. A major source of power amplifierinefficiency is power dissipated in the transistor. A Class A amplifieris inefficient since current flows continuously through the device.Conventionally, efficiency is improved by trading-off linearity forincreased efficiency. In Class B amplifiers, for example, biasingconditions are chosen such that the output signal is cut off during halfof the cycle unless the opposing half is provided by a second transistor(push-pull). As a result, the waveform will be less linear. The outputwaveform may still be made sinusoidal using a tank circuit or otherfilter to filter out higher and lower frequency components.

Class C amplifiers conduct during less than 50% of the cycle, in orderto further increase efficiency; i.e., if the output current conductionangle is less than 180 degrees, the amplifier is referred to as Class C.This mode of operation can have a greater efficiency than Class A orClass B, but it typically creates more distortion than Class A or ClassB amplifiers. In the case of a Class C amplifier, there is still somechange in output amplitude when the input amplitude is varied. This isbecause the Class C amplifier operates as a constant currentsource—albeit one that is only on briefly—and not a switch.

The remaining classes of amplifiers vigorously attack the problem ofpower dissipation within the transistor, using the transistor merely asa switch. The underlying principle of such amplifiers is that a switchideally dissipates no power, for there is either zero voltage across itor zero current through it. Since the switch's V-I product is thereforealways zero, there is no dissipation in this device. A Class E poweramplifier uses a single transistor, in contrast with a Class D poweramplifier, which uses two transistors

In real life, however, switches are not ideal. (Switches have turnon/off time and on-resistance.) The associated dissipation degradesefficiency. The prior art has therefore sought for ways to modifyso-called “switch-mode” amplifiers (in which the transistor is driven toact as a switch at the operating frequency to minimize the powerdissipated while the transistor is conducting current) so that theswitch voltage is zero for a non-zero interval of time about the instantof switching, thereby decreasing power dissipation. The Class Eamplifier uses a reactive output network that provides enough degrees offreedom to shape the switch voltage to have both zero value and zeroslope at switch turn-on, thus reducing switching losses. Class Famplifiers are still a further class of switch-mode amplifiers. Class Famplifiers generate a more square output waveform as compared to theusual sinewave. This “squaring-up” of the output waveform is achieved byencouraging the generation of odd-order harmonics (i.e., ×3, ×5, ×7,etc.) and suppressing the even-order harmonics (i.e., ×2, ×4, etc.) inthe output network.

An example of a known power amplifier for use in a cellular telephone isshown in FIG. 1. GSM cellular telephones, for example, must be capableof programming output power over a 30 dBm range. In addition, thetransmitter turn-on and turn-off profiles must be accurately controlledto prevent spurious emissions. Power is controlled directly by the DSP(digital signal processor) of the cellular telephone, via a DAC (digitalto analog converter). In the circuit of FIG. 1, a signal GCTL drives thegate of an external AGC amplifier that controls the RF level to thepower amplifier. A portion of the output is fed back, via a directionalcoupler, for closed-loop operation. The amplifier in FIG. 1 is not aswitch-mode amplifier. Rather, the amplifier is at best a Class ABamplifier driven into saturation, and hence demonstrates relatively poorefficiency.

FIG. 2 shows an example of a known Class E power amplifier, described inU.S. Pat. No. 3,919,656. An RF input signal is coupled over a lead 1 toa driver stage 2, the latter controlling the active device 5 via asignal coupled over a lead 3. The active device 5 acts substantially asa switch when appropriately driven by the driver 2. The output port ofthe active device is therefore represented as a single-pole single-throwswitch 6. Connected across the switch 6 is the series combination of aDC power supply 7 and the input port of a load network 9. The outputport of the load network 9 is connected to the load 11. As the switch 6is cyclically operated at the desired AC output frequency, DC energyfrom the power supply 7 is converted into AC energy at the switchingfrequency (and harmonics thereof).

U.S. Pat. No. 3,900,823 to Sokal et al. describes feedback control ofClass E power amplifiers. The need for feedback control suggests theinability to fully characterize device behavior, which in turn suggestssubstantial departure from operation of the device as a true switch.Sokal further describes a solution to the problem of feedthrough powercontrol at low power levels by controlling RF input drive magnitudethrough application of negative feedback techniques to control the DCpower supply of one or more preceding stages. The need for feedbackcontrol imposes constraints of feedback loop dynamics on a system.

The Class E amplifier arrangement of FIG. 2, although it istheoretically capable of achieving high conversion efficiency, suffersfrom the disadvantage that large voltage swings occur at the output ofthe active device, due to ringing. This large voltage swing, whichtypically exceeds three times the supply voltage, precludes the use ofthe Class E circuit with certain active devices which have a lowbreakdown voltage.

To operate an RF power amplifier in switch mode, it is necessary todrive the output transistor(s) rapidly between cutoff and full-on, andthen back to cutoff, in a repetitive manner. The means required toachieve this fast switching is dependent on the type of transistorchosen to be used as the switch: for a field-effect transistor (FET),the controlling parameter is the gate-source voltage, and for a bipolartransistor (BJT, HBT) the controlling parameter is the base-emittercurrent.

However, the driving circuit in the RF amplifier of FIG. 2 typicallyincludes a matching network consisting of a tuned (resonant) circuit.Referring to FIG. 3, in such an arrangement, an RF input signal iscoupled to a driver amplifier, typically of Class A operation. An outputsignal of the driver amplifier is coupled through the matching networkto a control terminal of the switching transistor, shown in FIG. 3 as anFET. As with design of the load network of FIG. 2, proper design of thematching network is not an easy matter.

Various designs have attempted to improve on different aspects of thebasic Class E amplifier. One such design is described in Choi et al., APhysically Based Analytic Model of FET Class-E PowerAmplifiers—Designing for Maximum PAE, IEEE Transactions on MicrowaveTheory and Techniques, Vol. 47, No. 9, September 1999. This contributionmodels various non-idealities of the FET switch and from such a modelderives conclusions about advantageous Class E amplifier design. For thechosen topology, maximum power-added efficiency (PAE) of about 55%occurs at a power level of one-half watt or less. At higher powers, PAEis dramatically reduced, e.g., less than 30% at 2W.

The PAE of a power amplifier is set by the amount of DC supply powerrequired to realize the last 26 dB of gain required to achieve the finaloutput power. (At this level of gain, the power input to the amplifierthrough the driving signal—which is not readily susceptible tomeasurement—becomes negligible.) Presently, there are no knownamplifying devices capable of producing output powers of 1W or greaterat radio frequencies and that also provide a power gain of at least 26dB. Accordingly, one or more amplifiers must be provided ahead of thefinal stage, and the DC power consumed by such amplifiers must beincluded in the determination of overall PAE.

Conventional design practice calls for an amplifier designer toimpedance-match the driver output impedance to the input impedance ofthe final switching transistor. The actual output power thereforerequired from the driver stage is defined by the required voltage (orcurrent) operating into the (usually low) effective input impedance ofthe switching element. A specific impedance for the input of theswitching transistor is not definable, since the concept of impedancerequires linear operation, and a switch is very nonlinear.

An example of an RF amplifier circuit in accordance with the foregoingapproach is shown in FIG. 4. An interstage “T section” consisting of aninductor L1, a shunt capacitor C and an inductor L2 is used to match thedriver stage to an assumed 50 ohm load (i.e., the final stage).

This conventional practice treats the interstage between the drive andfinal stages as a linear network, which it is not. Further, theconventional practice maximizes power transfer between the driver andfinal stages (an intended consequence of impedance matching). Thus, forexample, in order to develop the required drive voltage for a FET as theswitching transistor, the driver must also develop in-phase current aswell to provide the impedance-matched power.

Another example of a conventional RF power amplifier circuit is shown inFIG. 5. This circuit uses “resonant interstage matching” in which thedrive and final stages are coupled using a coupling capacitor Ccpl.

As noted, conventional design practice fails to achieve high PAE at highoutput power (e.g., 2W, a power level commonly encountered during theoperation of a cellular telephone). A need therefore exists for an RFpower amplifier that exhibits high PAE at relatively high output powers.

Survey of Prior Patents

Control of the output power from an amplifier is consistently shown asrequiring a feedback structure, as exemplified by Sokal et al. andfurther exemlified in the following U.S. Pat. Nos. 4,392,245; 4,992,753;5,095,542; 5,193,223; 5,369,789; 5,410,272; 5,697,072 and 5,697,074.Other references, such as U.S. Pat. No. 5,276,912, teach the control ofamplifier output power by changing the amplifier load circuit.

A related problem is the generation of modulated signals, e.g.,amplitude modulated (AM) signals, quadrature amplitude modulated signals(QAM), etc. A known IQ modulation structure is shown in FIG. 6. A datasignal is applied to a quadrature modulation encoder that produces I andQ signals. The I and Q signals are applied to a quadrature modulatoralong with a carrier signal. The carrier signal is generated by acarrier generation block to which a tuning signal is applied.

Typically, an output signal of the quadrature modulator is then appliedto a variable attenuator controlled in accordance with a power controlsignal. In other instances, power control is implemented by vaying thegain of the amplifier. This is achieved by adjusting the bias ontransistors within the inear amplifier, taking advantage of the effectwhere transistor transconductance varies with the aplied biasconditions. Since amplifier gain is strongly related to the transistortransconductance, varying the transconductance effectively varies theamplifier gain. A resulting signal is then amplified by a linear poweramplifier and applied to an antenna.

In AM signals, the amplitude of the signal is made substantiallyproportional to the magnitude of an information signal, such as voice.Information signals such as voice are not constant in nature, and so theresulting AM signals are continuously varying in output power.

A method for producing accurate amplitude modulated signals usingnon-linear Class C amplifiers, called “plate modulation,” has been knownfor over 70 years as described in texts such as Terman's Radio EngineersHandbook (McGraw-Hill, 1943). In the typical plate-modulation technique,output current from the modulator amplifier is linearly added to thepower supply current to the amplifying element (vacuum tube ortransistor), such that the power supply current is increased anddecreased from its average value in accordance with the amplitudemodulation. This varying current causes the apparent power supplyvoltage on the amplifying element to vary, in accordance with theresistance (or conductance) characteristics of the amplifying element.

By using this direct control of output power, AM can be effected as longas the bandwidth of the varying operating voltage is sufficient. Thatis, these non-linear amplifiers actually act as linear amplifiers withrespect to the amplifier operating voltage. To the extent that thisoperating voltage can be varied with time while driving the nonlinearpower amplifier, the output signal will be linearly amplitude modulated.

Other methods of achieving amplitude modulation include the combinationof a multitude of constant amplitude signals, as shown in the followingU.S. Pat. Nos. 4,580,111; 4,804,931; 5,268,658 and 5,652,546. Amplitudemodulation by using pulse-width modulation to vary the power supply ofthe power amplifier is shown in the following U.S. Pat. Nos. 4,896,372;3,506,920; 3,588,744 and 3,413,570. However, the foregoing patents teachthat the operating frequency of the switch-mode DC-DC converter must besignificantly higher than the maximum modulation frequency.

U.S. Pat. No. 5,126,688 to Nakanishi et al. addresses the control oflinear amplifiers using feedback control to set the actual amplifieroutput power, combined with periodic adjustment of the power amplifieroperating voltage to improve the operating efficiency of the poweramplifier. The primary drawback of this technique is the requirement foran additional control circuit to sense the desired output power, todecide whether (or not) the power amplifier operating voltage should bechanged to improve efficiency, and to effect any change if so decided.This additional control circuitry increases amplifier complexity anddraws additional power beyond that of the amplifier itself, whichdirectly reduces overall efficiency.

A further challenge has been to generate a high-power RF signal havingdesired modulation characteristics. This object is achieved inaccordance with the teachings of U.S. Pat. No. 4,580,111 to Swanson byusing a multitude of high efficiency amplifiers providing a fixed outputpower, which are enabled in sequence such that the desired totalcombined output power is a multiple of this fixed individual amplifierpower. In this scheme, the smallest change in overall output power isessentially equal to the power of each of the multitude of highefficiency amplfiers. If finely graded output power resolution isrequired, then potentially a very large number of individual highefficiency amplifiers may be required. This clearly increases theoverall complexity of the amplifier.

U.S. Pat. No. 5,321,799 performs polar modulation, but is restricted tofull-response data signals and is not useful with high power,high-efficiency amplifiers. The patent teaches that amplitude variationson the modulated signal are applied through a digital multiplierfollowing phase modulation and signal generation stages. The finalanalog signal is then developed using a digital-to-analog converter. Asstated in the State of the Art section herein, signals with informationalready implemented in amplitude variations are not compatible withhigh-efficiency, nonlinear power amplifiers due to the possibly severedistortion of the signal amplitude variations.

Despite the teachings of the foregoing references, a number of problemsremain to be solved, including the following: to achieve high-efficiencyamplitude modulation of an RF signal by varation of the operatingvoltage using a switch mode converter without requiring high-frequencyswitch-mode operation (as compared to the modulation frequency); tounify power-level and burst control with modulation control; to enablehigh-efficiency modulation of any desired character (amplitude and/orphase); and to enable high-power operation (e.g., for base stations)without sacrificing power efficiency.

SUMMARY OF THE INVENTION

The present invention, generally speaking, provides for high-efficiencypower control of a high-efficiency (e.g., hard-limiting or switch-mode)power amplifier in such a manner as to achieve a desired control ormodulation. Unlike the prior art, feedback is not required. That is, theamplifier may be controlled without continuous or frequent feedbackadjustment. In one embodiment, the spread between a maximum frequency ofthe desired modulation and the operating frequency of a switch-modeDC-DC converter is reduced by following the switch-mode converter withan active linear regulator. The linear regulator is designed so as tocontrol the operating voltage of the power amplifier with sufficientband-width to faithfully reproduce the desired amplitude modulationwaveform. The linear regulator is further designed to reject variationson its input voltage even while the output voltage is changed inresponse to an applied control signal. This rejection will occur eventhough the variations on the input voltage are of commensurate or evenlower frequency than that of the controlled output variation. Amplitudemodulation may be achieved by directly or effectively varying theoperating voltage on the power amplifier while simultaneously achievinghigh efficiency in the conversion of primary DC power to the amplitudemodulated output signal. High efficiency is enhanced by allowing theswitch-mode DC-to-DC converter to also vary its output voltage such thatthe voltage drop across the linear regulator is kept at a low andrelatively constant level. Time-division multiple access (TDMA) burstingcapability may be combined with efficient amplitude modulation, withcontrol of these functions being combined. In addition, the variation ofaverage output power level in accordance with commands from acommunications system may also be combined within the same structure.

The high-efficiency amplitude modulation structure may be extended toany arbitrary modulation. Modulation is performed in polar form, i.e.,in a quadrature-free manner.

Single high-efficiency stages may be combined together to formhigh-power, high-efficiency modulation structures.

BRIEF DESCRIPTION OF THE DRAWING

The present invention may be further understood from the followingdescription in conjunction with the appended drawing. In the drawing:

FIG. 1 is a block diagram of a known power amplifier with output powercontrolled by varying the power supply voltage;

FIG. 2 is a simplified block diagram of a known single-ended switch modeRF amplifier;

FIG. 3 is a schematic diagram of a portion of a known RF amplifier;

FIG. 4 is a schematic diagram of a conventional RF power amplifiercircuit;

FIG. 5 is a schematic diagram of another conventional RF power amplifiercircuit;

FIG. 6 is a block diagram of a known IQ modulation structure;

FIG. 7 is a block diagram of a power amplifier in accordance with anexemplary embodiment;

FIG. 8 is a plot comparing saturated Class AB power amplifier outputpower versus operating voltage with the mathematical model V={squareroot over (PR)};

FIG. 9 is a waveform diagram illustrating operation of one embodiment;

FIG. 10 is a waveform diagram illustrating operation of anotherembodiment;

FIG. 11 is a waveform diagram illustrating bursted AM operation;

FIG. 12 is a waveform diagram illustrating bursted AM operation withpower level control;

FIG. 13 is a block diagram of a polar modulation structure using ahigh-efficiency amplifier;

FIG. 14 is a block diagram of a first high power, high efficiency,amplitude modulating RF amplifier;

FIG. 15 is a waveform diagram illustrating operation of the amplifier ofFIG. 14;

FIG. 16 is a block diagram of a second high power, high efficiency,amplitude modulating RF amplifier;

FIG. 17 is a waveform diagram illustrating operation of the amplifier ofFIG. 16;

FIG. 18 is a block diagram of an RF switch mode amplifier in accordancewith one embodiment;

FIG. 19 is a schematic diagram of a portion of an RF switch modeamplifier in accordance with one embodiment of the present invention;

FIG. 20 is a schematic diagram of a suitable load network for use in theRF switch mode amplifier of FIG. 19;

FIG. 21 is a waveform diagram showing input voltage and relatedwaveforms for the RF switch mode amplifier of FIG. 19;

FIG. 22 is a waveform diagram showing base and collector currentwaveforms of the switching transistor of FIG. 19;

FIG. 23 is a waveform diagram showing output voltage for the RF switchmode amplifier of FIG. 19;

FIG. 24 is a schematic diagram of a portion of an RF switch modeamplifier in accordance with another embodiment;

FIG. 25 is a waveform diagram showing input voltage and relatedwaveforms for the RF switch mode amplifier of FIG. 24;

FIG. 26 is a waveform diagram showing collector current waveforms of thedrive transistors of FIG. 24;

FIG. 27 is a waveform diagram showing a gate voltage waveform of theswitching transistor of FIG. 24;

FIG. 28 is a schematic diagram of an RF power amplifier circuit inaccordance with another embodiment; and

FIG. 29 is a waveform diagram showing waveforms occurring at selectednodes of the amplifier circuit of FIG. 28.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring now to FIG. 7, a block diagram is shown of a power amplifierthat overcomes many of the aforementioned disadvantages. A switch-mode(or saturated) nonlinear amplifier has applied to it a voltage producedby a power control stage. In an exemplary embodiment, the voltage Vapplied to the nonlinear amplifier is controlled substantially inaccordance with the equation

V={square root over (PR)}

where P is the desired power output level of the amplifier and R is theresistance of the amplifier. In the case of a switch-mode or saturatedamplifier, the resistance R may be regarded as constant. The powercontrol stage receives a DC input voltage, e.g., from a battery, andreceives a power level control signal and outputs a voltage inaccordance with the foregoing equation.

The efficacy of directly controlling output power of nonlinearamplifiers over a wide dynamic range by solely varying the operatingvoltage is demonstrated by FIG. 8, showing a plot comparing saturatedClass AB power amplifier output power versus operating voltage with themathematical model V={square root over (PR)}.

Referring again to FIG. 7, a power control circuit in accordance with anexemplary embodiment. A power control circuit includes a switch-modeconverter stage and a linear regulator stage connected in series. Theswitch-mode converter may be a Class D device, for example, or aswitch-mode power supply (SMPS). The switch-mode converter efficientlysteps down the DC voltage to a voltage that somewhat exceeds but thatapproximates the desired power-amplifier operating voltage level. Thatis, the switch-mode converter performs an efficient gross power levelcontrol. The switch-mode converter may or may not provide sufficientlyfine control to define ramp portions of a desired power envelope.

The linear regulator performs a filtering function on the output of theswitch-mode converter. That is, the linear regulator controls precisepower-envelope modulation during a TDMA burst, for example. The linearregulator may or may not provide level control capabilities like thoseof the switch-mode converter.

Note that, depending on the speed of the switch-mode converter and thelinear regulator, the power control circuit may be used to perform powercontrol and/or amplitude modulation. A control signal PL/BURST/MOD isinput to a control block, which outputs appropriate analog or digitalcontrol signals for the switch-mode converter and the linear regulator.The control block may be realized as a ROM (read-only memory) and/or aDAC (digital to analog converter).

Referring to FIG. 9, a waveform diagram is shown, illustrating operationof one embodiment of the invention. The waveforms A and B representanalog control signals applied to the switch-mode converter and to thelinear regulator, respectively. The waveforms V₁ and V₂ represent theoutput voltages of the switch-mode converter and to the linearregulator, respectively. Assume that the switch-mode converter has arelatively large time constant, i.e., that it ramps relatively slowly.When the control signal A is set to a first non-zero power level, thevoltage V₁ will then begin to ramp toward a commensurate voltage.Because of the switch-mode nature of the converter, the voltage V₁ mayhave a considerable amount of ripple. An amount of time required toreach the desired voltage defines the wakeup period. When that voltageis reached, the control signal B is raised and lowered to define aseries of transmission bursts. When the control signal B is raised, thevoltage V₂ ramps quickly up to a commensurate voltage, and when thecontrol signal B is lowered, the voltage V₂ ramps quickly down.Following a series of bursts (in this example), the control signal A israised in order to increase the RF power level of subsequent bursts. Thecontrol signal B remains low during a wait time. When the voltage V₁ hasreached the specified level, the control signal B is then raised andlowered to define a further series of transmission bursts.

The voltage V₂ is shown in dotted lines superimposed on the voltage V₁.Note that the voltage V₂ is less than the voltage V₁ by a small amount,greater than the negative peak ripple on the voltage V₁. This smalldifference between the input voltage of the linear regulator V₁ and theoutput voltage of the linear regulator V₂ makes overall high-efficiencyoperation possible.

Referring to FIG. 10, in accordance with a different embodiment, theswitch-mode converter is assumed to have a relatively short timeconstant; i.e., it ramps relatively quickly. Hence, when the controlsignal A is raised, the voltage V₁ ramps quickly to the commensuratevoltage. The control signal B is then raised, and the voltage V₂ isramped. The time difference between when the control signal A is raisedon the control signal B is raised defines the wake up time, which may bevery short, maximizing sleep time and power savings. The control signalB is then lowered at the conclusion of the transmission burst, afterwhich the control signal A is lowered. Following the example of FIG. 9,in FIG. 10, when the control signal A is next raised, it defines ahigher power level. Again, the voltage V₂ is superimposed in dottedlines on the voltage V₁.

The same structure may be used to perform amplitude modulation inaddition to power and burst control. Referring to FIG. 11, a waveformdiagram is shown illustrating bursted AM operation. An output signal ofthe switch-mode converted is shown as a solid line. As a burst begins,the output signal of the switch-mode converter ramps up. Optionally, asshown in dashed line, the switch-mode converter may ramp up to a fixedlevel with the linear regulator effecting all of the amplitudemodulation on the output signal. More preferably, from an efficiencystandpoint, the switch-mode converter effects amplitude modulation,producing an output signal that, ignoring noise, is a small fixed offsetΔV above the desired output signal. The linear regulator removes thenoise from the out put signal of the switch-mode converter, effectivelyknocking down the signal by the amount ΔV. The output signal of thelinear regulator is shown as a dotted line in FIG. 11. At the conclusionof the burst, the signals ramp down.

Full control of the output signal power level (average power of thesignal) is retained. A succeeding burst, for example, might occur at ahigher power level, as shown in FIG. 12. As compared to FIG. 11, in FIG.12, all signals scale appropriately to realize a higher average poweroutput.

Incorporation of amplitude modulation on a phase-modulated signal,though it complicates the signal generation method, is often desirablesince such signals may, and often do, occupy less bandwidth than purelyphase-modulated signals. Referring to FIG. 13, a block diagram is shownof a polar modulation structure using a high-efficiency amplifier of thetype described thus far. This polar modulation structure is capable ofeffecting any desired modulation. A data signal is applied to amodulation encoder that produces magitude and phase signals. The phasesignal is applied to a phase-modulation-capable carrier generationblock, to which a tuning signal is also applied. A resulting signal isthen amplified by a non-linear power amplifier of the type previouslydescribed. Meanwhile, the magnitude signal is applied to a magnitudedriver. The magnitude driver also receives a power control signal. Inresponse, the magnitude driver produces an operating voltage that isapplied to the non-linear amplifier. The magnitude driver and thenon-linear amplifier may be realized in the same manner as FIG. 7,described previously, as indicated in FIG. 13 by a dashed line.

The modulation structures described thus far are suitable for use in,among other applications, cellular telephone-handsets. A similar needfor high-efficiency RF signal generation exists in cellular telephonebasestations. Basestations, however, operate at much higher power thanhandsets. The following structure may be used to achieve high-power,high-efficiency RF signal generation.

Referring to FIG. 14, a first high power, high efficiency, amplitudemodulating RF amplifier includes multiple switch mode power amplifier(SMPA) blocks, each block being realized as shown in FIG. 7, forexample. An RF signal to be amplified is input to all of the SMPA blocksin common. Separate control signals for each of the SMPA blocks aregenerated by a magnitude driver in response to a magnitude input signal.Output signals of the SMPA blocks are summed to form a single resultantoutput signal.

The manner of operation of the amplifier of FIG. 14 may be understoodwith reference to FIG. 15. On the left-hand side is shown an overallmagnitude signal that is applied to the magnitude driver. On theright-hand side are shown SMPA drive signals output by the magnitudedriver to be applied to the respective SMPAs. Note that the sum of theindividual drive signals yields the overall magnitude signal.

An alternative embodiment of a high-power amplifier is shown in FIG. 16.In this embodiment, instead of generating individual drive signals forthe respective SMPAs, a common drive signal is generated and applied incommon to all of the SMPAs. At a given instant in time, the common drivesignal is caused to have a value that is one Nth of an overall magnitudesignal applied to the magnitude driver, where N is the number of SMPAs.The result is illustrated in FIG. 17. Once again, note that the sum ofthe individual drive signals yields the overall magnitude signal.

Referring now to FIG. 18, there is shown a block diagram of an RF switchmode amplifier in accordance with a another embodiment. An RF inputsignal is applied to a non-reactive driving circuit. The driving circuitis-coupled to an active device to drive the active device switch. Theactive device switch is coupled to a load network that produces an RFoutput signal for application to a load, e.g., an antenna. Preferably,power is applied to the active device switch through a rapid timevariable power supply, realized by the series combination of a switchmode power supply and a linear regulator, enabling the operating voltageof the active device switch to be varied. By varying the operatingvoltage in a controlled manner, power control, burst control andmodulation may be achieved as described previously.

The active device switch may be either a bipolar transistor or a FETtransistor. Referring to FIG. 19, a schematic diagram is shown of aportion of an RF switch mode amplifier in which the active device switchis a bipolar transistor having collector, emitter and base terminals.The collector of the bipolar transistor N1 is connected through an RFchoke L to an operating voltage V_(PA) and is also connected to anoutput matching network. The emitter of the bipolar transistor N1 isconnected to circuit (AC) ground.

The base of the bipolar transistor N1 is connected to the emitter ofanother bipolar transistor N2 (the driver transistor) in Darlingtonfashion. The collector of the driver transistor N2 is connected to anoperating voltage V_(DRIVER) and is also connected to a bypasscapacitor. Associated with the driver transistor N2 is a bias networkincluding, in the illustrated embodiment, three resistors, R1, R2 andR3. One resistor R1 is connected from the emitter of the drivertransistor to circuit ground. Another resistor R2 is connected from thebase of the driver transistor to ground. The final resistor R3 isconnected from the base of the driver transistor N2 to V_(DRIVER). An RFinput signal is applied to the base of the driver transistor through aDC isolation capacitor C_(in).

Referring to FIG. 20, the output network may take the form of animpedance-matching transmission line TL and a capacitor C_(out).

The RF input voltage signal is sinusoidal as shown by waveform 1 of FIG.21. The input voltage is level shifted upward to produce a voltage atthe base of the driver transistor N2, shown by waveform 2. The emittervoltage of the driver transistor N2, shown by waveform 3, is one V_(be)drop below and is applied to the base of the switching transistor N1. Atthe beginning of the positive half-cycle, the driver transistor N2 isoperating as an emitter follower, with output (emitter) voltagesufficiently below the turn-on voltage of the switching transistor N1 sothat the switching transistor N1 is cut off. As the signal increases,the driver transistor N2 turns the switching transistor N1 on and drivesit into saturation as shown in FIG. 22. Current flows through the RFchoke L and through the switching transistor N1, and the output voltagedecreases as the capacitor C_(out) is discharged as shown in FIG. 23.Near the end of the positive half-cycle, the driver transistor N2 outputvoltage falls below the turn-on voltage of the switching transistor N1,allowing it to turn off. The value of the resistor R1 is chosen suchthat the switching transistor N1 quickly cuts off. Current continues toflow through the RF choke L, charging the capacitor C_(out) and causingthe output voltage to increase.

Referring to FIG. 24, a schematic diagram is shown of a portion of an RFswitch mode amplifier in which the active device switch is a FETtransistor (MES-FET, JFET, PHEMT, etc.) having drain, source and gateterminals. The drain of the FET transistor M1 is connected through an RFchoke L1 to an operating voltage V_(PA) and is also connected to anoutput network. The source of the FET transistor is connected to circuit(AC) ground.

The gate of the FET transistor is biased from supply −V_(B) through alarge value resistor R1, and is further connected through a DC isolationcapacitor C1 to a pair of bipolar transistors (driver transistors)connected in push-pull arrangement. The driver transistors include anNPN transistor N1 and a PNP transistor P1. The collector of the NPNdriver transistor N1 is connected to an operating voltage V_(CC) and isalso connected to a bypass capacitor. The collector of the PNP drivertransistor P1 is connected to a negative reference voltage −V_(B) and isalso connected to a bypass capacitor. The bases of the drivertransistors are connected in common. Large-valued resistors R2 and R3connect the common node to the respective power supply rails.

A further NPN bipolar transistor N2 is connected in common baseconfiguration. The emitter of the further bipolar transistor isconnected through a resistor R4 to −V_(B) and is connected through acapacitor C3 to the RF input signal. The collector of the furtherbipolar transistor is connected through an inductor L2 to V_(CC) and isalso connected to a bypass capacitor.

Referring to FIG. 25, input voltage waveforms 1-4 are shown for thecircuit of FIG. 24. The input voltage 1 is level shifted down one V_(be)(producing voltage 2) and is then applied to the emitter of the bipolartransistor N2. A large voltage swing 3 is produced at the collector ofthe bipolar transistor N2 by action of the inductor L2. This voltageswing is level shifted downward produce a voltage 4 that is applied tothe bases of the driver transistors at node n. In operation, during thepositive half-cycle, initially the further bipolar transistor N2 isturned off. Current flows through the inductor L2 into the capacitor C2coupled to the bases of the transistor pair, causing the NPN transistorN1 to turn on and causing the PNP transistor P1 to turn off (FIG. 26).The DC isolation capacitor C1 is charged up from the V_(CC) supply,raising the gate potential of the FET M1, causing it to turn on (FIG.27). During the negative half-cycle, the further bipolar transistor N2is turned on. Current flows through the inductor L2, through the furthertransistor N2 to the −V_(B) rail. Current also flows out of the base ofthe PNP transistor P1, turning it on. The DC isolation capacitor C1discharges, lowering the gate potential of the FET M1, causing it toturn off. The output network operates in the same manner as previouslydescribed.

Referring now to FIG. 28, a schematic diagram is shown of a multi-stageRF power amplifier circuit with which the foregoing driver circuit maybe used. An input matching circuit composed of a coupling capacitor C₁,a capacitor C₂ and an inductor L₁ is used to set the input impedance ofthe circuit. A driver stage M₁ and a final stage M₂ are shown as FETs,although in other embodiments bipolar transistors may be used. The drainelectrode of the FET M₁ is coupled to a supply voltage V_(d1) through adrain bias network including an RF choke L₃ and a capacitor C₅.Similarly, the drain electrode of the FET M₂ is coupled to a supplyvoltage V_(d2) through a drain bias network including an RF choke L₇ anda capacitor C₁₀.

Respective gate bias networks are provided for the stages M₁ and M₂. Inthe case of the stage M₁, the gate bias network is composed of aninductor L₂, a capacitor C₃ and a capacitor C₄ connected at a commonnode to a voltage V_(g1). In the case of the stage M₂, the gate biasnetwork is composed of an inductor L₆, a capacitor C₈ and a capacitor C₉connected at a common node to a voltage V_(g2).

The driver stage and the final stage are coupled by an interstagenetwork, shown here as a series LC combination composed of an inductorL₄ and a capacitor C₆, values of which are chosen so as to provide aresonance with the input capacitance of the final stage M₂. The finalstage M₂ is coupled to a conventional load network, illustrated in thisexample as a CLC Pi network composed of a capacitor C₁₁, an inductor L₈and a capacitor C₁₂, values of which are determined in accordance withcharacteristics of the final stage M₂.

In an exemplary embodiment, component values may be as follows, wherecapacitance is measured in picofarads and inductance is measured innanohenries:

TABLE 1 Capacitor pf Inductor nh Voltage V C₁  27 L₁ 8.2 V_(d1) 3.3 C₂ 10 L₂ 33 V_(d2) 3.2 C₃  0.01 L₃ 33 V_(g1) −1.53 C₄  27 L₄ 4.7 V_(g2)−1.27 C₅  27 L₅ NA C₆  27 L₆ 39 C₇  NA L₇ 15 C₈  27 L₈ 2.7 C₉  0.01 C₁₀27 C₁₁ 1.5 C₁₂ 5.6

In the example of FIG. 28, the driver stage, stage M₁, is operated inswitch mode. Referring to FIG. 29, waveforms diagrams are providedshowing the input voltage to the stage M₂ at node A, the drain voltageof the stage M₁ at node B, the drain voltage of the stage M₂ at node C,the drain current of the stage M₁ at node D, and the drain current ofthe stage M₂ at node E. Note that the peak value of the gate voltage ofthe final stage, stage M₂ (waveform A), is considerably greater than inconventional designs. In this arrangement, the input drive of the switchmay be sufficiently high that the operating voltage of the driver stagemay be reduced. This reduction further reduces the DC supply power tothe driver, enhancing PAE.

Using circuits of the type illustrated, PAE of 72% has been measured atan output power of 2W.

Hence, there has been described power amplifier circuit arrangements,including driving circuits and a multi-stage amplifier circuit, thatallow for precise generation of a desired RF waveform without the needfor feedback and with high power-added efficiency.

What is claimed is:
 1. An RF amplifier apparatus, comprising: aplurality of amplifiers modules, each amplifier module comprising anonlinear switch-mode RF amplifier having an RF input configured toreceive common RE input signal, and a power controller having amagnitude control input; a magnitude driver, responsive to a magnitudeinput signal, operable to provide magnitude control signals to saidmagnitude control inputs of said plurality of power controllers; and asummer configured to receive RF output signals from said plurality ofamplifiers modules and provide a resultant RF output signals, whereinsaid RF input signal drive one or more of said nonlinear switch-mode RFamplifiers between a hard-on state and a hard-off state, withoutoperating said nonlinear switch-mode RF amplifiers in linear operatingregions for any appreciable any percentage of time.
 2. The RF amplifierapparatus of claim 1 wherein the RF input signal is a phase modulated RFinput signal.
 3. The RF amplifier apparatus of claim 1 wherein eachpower controller has a power supply input port configured to receive aDC supply voltage and a power control output configured to provide avariable supply output voltage to a supply input of its associatednonlinear switch-mode RF amplifier.
 4. The RF amplifier apparatus ofclaim 3 wherein each power controller comprises a switch-mode converterconfigure to receive the DC supply voltage and provide the variablesupply output voltage, said variable supply output voltage approximatinga desired operating voltage level of said each power controller'sassociated nonlinear switch-mode RF amplifier.
 5. The RF amplifierapparatus of claim 4 wherein each power controller further comprises aregulator coupled between the supply input of its associated nonlinearswitch-mode RF amplifier and an output of the switch-mode vowerconverter.
 6. The RF amplifier apparatus of claim 5 wherein eachswitch-mode converter comprises a switch-mode power supply.
 7. The RFamplifier apparatus of claim 1 wherein said magnitude control signalsderive from a common magnitude control signal generated by saidmagnitude driver.
 8. The RF amplifier apparatus of claim 1 wherein saidmagnitude control signals are individual and separate magnitude controlsignals generated for each associated power contoller.
 9. The RFamplifier apparatus of claim 1 wherein each nonlinear switch-mode RFamplifier comprises a Class D amplifier.
 10. The RF amplifier apparatusof claim 1 wherein each nonlinear switch-mode RF amplifier comprises aClass E amplifier.
 11. The RF amplifier apparatus of claim 1 whereineach nonlinear switch-mode RF amplifier comprises a Class F amplifier.12. A method of amplifying an RF signal, comprising: applying an RFinput signal to RF inputs of a plurality of nonlinear switch-mode RFamplifiers, said RF input signal operable to drive one or more of saidnonlinear switch-mode RF amplifiers repeatedly between a hard-on stateand a hard-off state, without operating said one or more nonlinearswitch-mode RF amplifiers in linear operating region for any appreciablepercentage of time; applying magnitude control signals to magnitudecontrol inputs of a plurality of power controllers associated with saidplurality of nonlinear switch-mode RF amplifiers; amplifying said RFinput by said plurality of nonlinear switch-mode RF amplifiers, inaccordance with associated magnitude control signals; and summing RFoutput signals from the plurality of nonlinear switch-mode RF amplifiersto form a resultant RF output signal.
 13. The method of claim 12 Whereinth RF input signal is a phase modulated signal.
 14. The method of claim12, further comprising: applying a DC supply voltage to power supplyinput ports of each of aid plurality of power controllers; generating aplurality of variable supply output voltages and; applying said variablesupply output voltages to supply inputs of said plurality of nonlinearswitch-mode RF amplifiers.
 15. The method of claim 14 wherein generatinga plurality of variable supply output voltages comprises convert said DCsupply voltage to asaid variable supply output voltages, said pluralityof DC variable supply output voltages approximating desired operatingvoltage levels of said plurality of nonlinear switch-mode RF amplifiers.16. The method of claim 15 wherein generating a plurality of variablesupply output voltages further comprises regulating said DC variablesupply output voltages.
 17. The method of claim 15 wherein convertingsaid DC supply voltage to a plurality of variable supply output voltagesis performed by an associated plurality of switch-mode converters. 18.The method of claim 12 wherein each switch-mode power amplifiercomprises a Class D amplifier.
 19. The method of claim 12 wherein eachswitch-mode power amplifier comprises a Class E amplifier.
 20. An RFamplifier apparatus, comprising: a plurality of RF amplifier modules,each RF amplifier module having a power control circuit and a nonlinearRF amplifier, and each RF amplifier module configured to receive an RFinput signal; and a summer configured to receive RF output signals fromsaid plurality of amplifier modules, wherein said RF input signal drivesone or more of said nonlinear RF amplifiers repeatedly between a hard-onstate and a hard-off state, without operating said nonlinear RFamplifiers in linear operating regions for any appreciable percentage oftime.
 21. The RF amplifier apparatus of claim 20 wherein th nonlinear RFamplifiers comprise switch-mode amplifiers.
 22. The RF amplifierapparatus of claim 20 wherein th power control circuits each include aswitch-mode converter configured to receive DC supply voltage andprovide a converted supply voltage.
 23. The RF amplifier apparatus ofclaim 22 wherein the switch-mode converters provide ramp and levelcontrol.
 24. The RF amplifier apparatus of claim 20 wherein th powercontrol circuits each include a regulator configured to provide ramp andlevel control.
 25. The RF amplifier apparatus of claim 21 wherein ea ofthe power control circuits further includes a regulator coupled betweenan output of the switch-mode converter and power control input of anassociated nonlinear RF amplifier.